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HM4622 - N & P-Channel Enhancement Mode Power MOSFET

Description

excellent RDS(ON) and low gate charge .

This device is suitable for use as a load switch or in PWM applications.

Features

  • N-Channel VDS = 20V,ID =5.0A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.2V.
  • P-Channel VDS = -20V,ID = -5.0A RDS(ON) < 52mΩ @ VGS=-4.5V RDS(ON) < 75mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount pack age N-channel P-channel Schematic diagram HM4622 Marking and pin assignment.

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Datasheet Details

Part number HM4622
Manufacturer H&M Semiconductor
File Size 817.97 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4622 Datasheet

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Full PDF Text Transcription

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HM4622 N and P-Channel Enhancement Mode Power MOSFET Description The HM4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● N-Channel VDS = 20V,ID =5.0A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.2V ● P-Channel VDS = -20V,ID = -5.0A RDS(ON) < 52mΩ @ VGS=-4.5V RDS(ON) < 75mΩ @ VGS=-2.
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