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HM4616Q - N And P-Channel Enhancement Mode MOSFET

Description

charge .

other applications.

Features

  • N-channel： VDS =30V,ID =28A RDS(ON)=12mΩ (typical) @ VGS=10V RDS(ON)=14mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V,ID =-18A RDS(ON)=22mΩ (typical) @ VGS=-10V RDS(ON)=30mΩ (typical) @ VGS=-4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested 100% UIS TESTED!.

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Datasheet Details

Part number HM4616Q
Manufacturer H&M Semiconductor
File Size 871.65 KB
Description N And P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HM4616Q Datasheet

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Full PDF Text Transcription

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HM4616Q N And P-Channel Enhancement Mode MOSFET Description The HM4616Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features  N-channel： VDS =30V,ID =28A RDS(ON)=12mΩ (typical) @ VGS=10V RDS(ON)=14mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V,ID =-18A RDS(ON)=22mΩ (typical) @ VGS=-10V RDS(ON)=30mΩ (typical) @ VGS=-4.
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