HM4616Q
Description
The HM4616Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- N-channel：
VDS =30V,ID =28A RDS(ON)=12mΩ (typical) @ VGS=10V RDS(ON)=14mΩ (typical) @ VGS=4.5V P-Channel：
VDS =-30V,ID =-18A RDS(ON)=22mΩ (typical) @ VGS=-10V RDS(ON)=30mΩ (typical) @ VGS=-4.5V
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
100% UIS TESTED!
Application
100% ∆Vds TESTED!
- Pch+Nch plementary MOSFET for DC-FAN
- H-Bridge application
Ordering Information
Part Number HM4616Q
Storage Temperature -55°C to +150°C
Q1:1.Source 2.Gate 7.Drain 8.Drain Q2:3.Source 4.Gate 5.Drain 6.Drain
DFN3X3-8L Plastic Package
Package DFN3X3-8L
Devices Per Reel 5000
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter...
