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HM45P03K - P-Channel Enhancement Mode Power MOSFET

Description

The HM45P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

  • VDS = -30V,ID = -45A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON).

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P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM45P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -45A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) <15mΩ @ VGS=-4.
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