HM45P02Q
Description
The HM45P02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =-20V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Schematic diagram Pin Assignment
Application
- Load switch
- Battery protection
Package Marking and Ordering Information
DFN 3.3x3.3 EP top view
Device Marking HM45P02Q
Device HM45P02Q
Device Package DFN 3.3x3.3 EP
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃) Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and...
