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HM4490B - N-Channel Enhancement Mode Power MOSFET

Description

The HM4490B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =200V,ID =2A RDS(ON) < 79mΩ @ VGS=10V （Typ：580mΩ） Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses.

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Datasheet Details

Part number HM4490B
Manufacturer H&M Semiconductor
File Size 613.18 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4490B Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The HM4490B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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