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HM4454 - N-Channel Enhancement Mode Power MOSFET

Description

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID =8A RDS(ON) < 28mΩ @ VGS=10V (Typ:22mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current Schematic diagram.

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Datasheet Details

Part number HM4454
Manufacturer H&M Semiconductor
File Size 407.14 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4454 Datasheet

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HM4454 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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