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HM4421F - P-Channel Enhancement Mode Power MOSFET

Description

The HM4421F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Features

  • VDS =-60V,ID =-7.5A RDS(ON).

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Datasheet Details

Part number HM4421F
Manufacturer H&M Semiconductor
File Size 492.09 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4421F Datasheet

Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The HM4421F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-7.5A RDS(ON) <45mΩ @ VGS=-10V RDS(ON) <60mΩ @ VGS=-4.
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