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HM4302 - N-Channel Enhancement Mode Power MOSFET

Description

The+0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =A RDS(ON) < mΩ @ VGS=10V RDS(ON) < mΩ @ VGS=5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

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Datasheet Details

Part number HM4302
Manufacturer H&M Semiconductor
File Size 374.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4302 Datasheet

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Full PDF Text Transcription

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+0 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The+0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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