HM40N20D
Description
The HM40N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =200V,ID =40A RDS(ON) <41mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Schematic diagram
Marking and pin assignment
100% UIS TESTED! 100% ΔVds TESTED!
TO-263-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
72/
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain...
