HM3N90I
Description
： VDSS 900 HM3N90I, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤5.5Ω)
- Low Gate Charge (Typical Data:16nC)
- Low Reverse transfer capacitances(Typical:6.5pF) z 100% Single Pulse avalanche energy Test
