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HM3N80K - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

the avalanche energy.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test.

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Datasheet preview – HM3N80K

Datasheet Details

Part number HM3N80K
Manufacturer H&M Semiconductor
File Size 1.28 MB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HM3N80K Datasheet
Additional preview pages of the HM3N80K datasheet.

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Full PDF Text Transcription

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HM3N80K Silicon N-Channel Power MOSFET General Description： VDSS 800 HM3N80K, the silicon N-channel Enhanced VDMOSFETs, is ID 3 obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 75 conduction loss, improve switching performance and enhance RDS(ON)Typ 4.0 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and TO-/ higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier.
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