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HM3N80F - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

the avalanche energy.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number HM3N80F
Manufacturer H&M Semiconductor
File Size 1.09 MB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HM3N80F Datasheet
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Full PDF Text Transcription

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HM3N80F Silicon N-Channel Power MOSFET General Description： VDSS 800 HM3N80F, the silicon N-channel Enhanced VDMOSFETs, is ID 3 obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 75 conduction loss, improve switching performance and enhance RDS(ON)Typ 4.0 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier.
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