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HM3710 - N-Channel Enhancement Mode Power MOSFET

Description

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) Schematic diagram.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation   +0.

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+0 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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