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HM35P06K - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM35P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Features

  • VDS =-60V,ID =-35A RDS(ON).

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Datasheet Details

Part number HM35P06K
Manufacturer H&M Semiconductor
File Size 394.62 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM35P06K Datasheet
Additional preview pages of the HM35P06K datasheet.

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Full PDF Text Transcription

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+03. P-Channel Enhancement Mode Power MOSFET Description The HM35P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-35A RDS(ON) <32mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● High side switch for full bridge converter ● DC/DC converter for LCD display Schematic diagram +03.
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