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HM35P06 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM35P06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Features

  • VDS =-60V,ID =-35A RDS(ON).

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Datasheet preview – HM35P06

Datasheet Details

Part number HM35P06
Manufacturer H&M Semiconductor
File Size 738.75 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM35P06 Datasheet
Additional preview pages of the HM35P06 datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The HM35P06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
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