HM35P03 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM35P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

VDS = -30V,ID = -35A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

H&M Semiconductor

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Datasheet Details

Part number	HM35P03
Manufacturer	H&M Semiconductor
File Size	814.51 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM35P03 Datasheet
Additional preview pages of the HM35P03 datasheet.

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Full PDF Text Transcription

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HM35P03 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM35P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -35A RDS(ON) < 25mΩ @ VGS=-4.

Published: Jun 30, 2025 |