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HM35N03Q - MOSFET

Datasheet Summary

Description

The HM35N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =35A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 9.5mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet preview – HM35N03Q

Datasheet Details

Part number HM35N03Q
Manufacturer H&M Semiconductor
File Size 314.34 KB
Description MOSFET
Datasheet download datasheet HM35N03Q Datasheet
Additional preview pages of the HM35N03Q datasheet.

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Full PDF Text Transcription

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Description The HM35N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =35A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 9.5mΩ @ VGS=4.
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