HM35N03D Datasheet PDF - H&M Semiconductor N-Channel Enhancement Mode Power MOSFET Specs

HM35N03D - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM35N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =35A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 9.5mΩ @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

Datasheet Details

Part number	HM35N03D
Manufacturer	H&M Semiconductor
File Size	326.43 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM35N03D Datasheet
Additional preview pages of the HM35N03D datasheet.

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Full PDF Text Transcription

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HM35N03D N-Channel Enhancement Mode Power MOSFET Description The HM35N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =35A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 9.5mΩ @ VGS=4.

Published: Jul 1, 2025 |