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HM3400G - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3400G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 30V,ID = 2.0A RDS(ON) = 100mΩ (Typ) @ VGS=2.5V RDS(ON) = 75mΩ (Typ) @ VGS=4.5V RDS(ON) = 65mΩ (Typ) @ VGS=10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – HM3400G

Datasheet Details

Part number HM3400G
Manufacturer H&M Semiconductor
File Size 382.72 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3400G Datasheet
Additional preview pages of the HM3400G datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. HM3400G GENERAL FEATURES ● VDS = 30V,ID = 2.0A RDS(ON) = 100mΩ (Typ) @ VGS=2.5V RDS(ON) = 75mΩ (Typ) @ VGS=4.
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