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HM3400F - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM3400F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 30V,ID = 4.0A RDS(ON) < 70mΩ @ VGS=2.5V RDS(ON) < 48mΩ @ VGS=4.5V RDS(ON) < 42mΩ @ VGS=10V S Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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Datasheet preview – HM3400F

Datasheet Details

Part number HM3400F
Manufacturer H&M Semiconductor
File Size 333.70 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3400F Datasheet
Additional preview pages of the HM3400F datasheet.

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Full PDF Text Transcription

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HM3400F N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D G GENERAL FEATURES ● VDS = 30V,ID = 4.0A RDS(ON) < 70mΩ @ VGS=2.5V RDS(ON) < 48mΩ @ VGS=4.
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