• Part: HM3205K
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 743.89 KB
Download HM3205K Datasheet PDF
H&M Semiconductor
HM3205K
DESCRIPTION The HM3205K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES - VDS =55V,ID =105A RDS(ON) < 6.0mΩ @ VGS=10V (Typ:5.0mΩ) Schematic diagram - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-252 top view Package Marking And Ordering Information Device Marking Device Device Package TO-252 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source...