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HM2P15R - -150V P-Channel Enhancement Mode MOSFET

Description

The HM2P15R uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -150V ID =-2.0 A RDS(ON) < 780mΩ @ VGS=10V.

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Datasheet Details

Part number HM2P15R
Manufacturer H&M Semiconductor
File Size 1.20 MB
Description -150V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HM2P15R Datasheet

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Full PDF Text Transcription

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HM2P15R -150V P-Channel Enhancement Mode MOSFET Description The HM2P15R uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -150V ID =-2.
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