HM25N08D - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =80V,ID =25A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

H&M Semiconductor

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Datasheet Details

Part number	HM25N08D
Manufacturer	H&M Semiconductor
File Size	513.02 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM25N08D Datasheet
Additional preview pages of the HM25N08D datasheet.

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HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Jul 15, 2025 |