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HM2333 - P-Channel Enhancement Mode Power MOSFET

Description

The HM2333 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.5V D G S Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

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Datasheet Details

Part number HM2333
Manufacturer H&M Semiconductor
File Size 364.88 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2333 Datasheet

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HM2300 N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription

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HM2333 P-Channel Enhancement Mode Power MOSFET Description The HM2333 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.
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