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100V N Channel Enhancement Mode MOSFET 100 V N MOS
HM2328
VDS= 100V RDS(ON), Vgs@10V, Ids@1.0A = 270m Ω RDS(ON), Vgs@4.5V, Ids@0.5A = 340m Ω
Features Advanced trench process technology High Density Cell Design For Ultra Low OnResistance
Improved ShootThrough FOM Package Dimensions
Package Dimensions
Marking D
SOT-23(PACKAGE)
2328
G
S
REF.
A B C D E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min.
Max.
1.90 1.00 0.10 0.40 0.85
REF. 1.30 0.20 1.
HM2328 Datasheet
