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HM2306 - N-Channel Enhancement Mode Power MOSFET

Description

The HM2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram  Marking and pin Assignment .

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Datasheet Details

Part number HM2306
Manufacturer H&M Semiconductor
File Size 279.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2306 Datasheet

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Full PDF Text Transcription

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HM2306 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.
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