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N-Channel Trench Power MOSFET
General Description
The HM2302E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
Features
● VDS = 15V,ID =2.0A RDS(ON) < 55mΩ @ VGS =4.5V RDS(ON) <85mΩ @ VGS =2.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
● Battery protection ● Load switch ● Power management
HM2302E
Schematic Diagram SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2302E
HM2302E
SOT-23
Reel Size Ø180mm
Table 1.
HM2302E Datasheet
