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HM2302DR - N-Channel 20V MOSFET

Description

The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management in Note book Portable Equipmen

Features

  • ES.
  • RDS(ON)= 270 mΩ @VGS=4.5V.
  • RDS(ON)= 330 mΩ @VGS=2.5V.
  • RDS(ON)= 450 mΩ @VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 20 ±8 Unit V V.
  • Th Nov, 2013-Ver1.0 01 .3.
  • 8 1&KDQQHO9 '6 026)(7 Abs.

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Datasheet Details

Part number HM2302DR
Manufacturer H&M Semiconductor
File Size 445.34 KB
Description N-Channel 20V MOSFET
Datasheet download datasheet HM2302DR Datasheet

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Full PDF Text Transcription

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.3*8 1&KDQQHO9 '6 026)(7 GENERAL DESCRIPTION The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● FEATURES ● RDS(ON)= 270 mΩ @VGS=4.5V ● RDS(ON)= 330 mΩ @VGS=2.5V ● RDS(ON)= 450 mΩ @VGS=1.
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