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HM2301G - P-Channel Enhancement Mode Power MOSFET

Description

The HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -2A RDS(ON) < 10mΩ @ VGS=-2.5V RDS(ON) < 10mΩ @ VGS=-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram  Marking and pin Assignment.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM* P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -2A RDS(ON) < 10mΩ @ VGS=-2.5V RDS(ON) < 10mΩ @ VGS=-4.
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