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HM2301F - P-Channel Enhancement Mode Power MOSFET

Description

The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number HM2301F
Manufacturer H&M Semiconductor
File Size 521.88 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2301F Datasheet

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Full PDF Text Transcription

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HM2301F P-Channel Enhancement Mode Power MOSFET Description The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.
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