HM20P03Q - P-Channel Enhancement Mode Power MOSFET

Description

The HM20P03Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

V S = -30V,I = -20A D D RDS(ON) < 34mΩ @ VGS=-4.5V RDS(ON) < 23mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

H&M Semiconductor

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Datasheet Details

Part number	HM20P03Q
Manufacturer	H&M Semiconductor
File Size	586.62 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM20P03Q Datasheet
Additional preview pages of the HM20P03Q datasheet.

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Full PDF Text Transcription

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HM20P03Q P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM20P03Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● V S = -30V,I = -20A D D RDS(ON) < 34mΩ @ VGS=-4.

Published: Jul 1, 2025 |