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HM20P02Q - P-Channel Enhancement Mode Power MOSFET

Description

The HM20P02Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -20A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – HM20P02Q

Datasheet Details

Part number HM20P02Q
Manufacturer H&M Semiconductor
File Size 595.61 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM20P02Q Datasheet
Additional preview pages of the HM20P02Q datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET HM20P02Q Description The HM20P02Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -20A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Motor drive ● Load switch ● Power management D G S Schematic diagram Pin Assignment DFN 3.3x3.
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