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HM20P02D - P-Channel Enhancement Mode Power MOSFET

Description

The +03' uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -20A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – HM20P02D

Datasheet Details

Part number HM20P02D
Manufacturer H&M Semiconductor
File Size 652.96 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM20P02D Datasheet
Additional preview pages of the HM20P02D datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET +03' Description The +03' uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -20A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.
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