HM18N20K
Description
The HM18N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =200V,ID =18A
RDS(ON) <120mΩ @ VGS=10V
（Typ：100mΩ）
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Schematic diagram
HM18N20K Marking and pin assignment
100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252-2L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum...
