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HM15P10D - P-Channel Enhancement Mode Power MOSFET

Description

The +03' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Features

  • VDS =-100V,ID =-A RDS(ON).

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+0 3' P-Channel Enhancement Mode Power MOSFET Description The +03' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=--4.
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