HM10P10Q - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

The HM10P10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Features

VDS =-100V,ID =-10A RDS(ON).

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HM10P10Q p-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM10P10Q
Manufacturer	H&M Semiconductor
File Size	459.02 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM10P10Q Datasheet

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P-Channel Enhancement Mode Power MOSFET Description The HM10P10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.

Published: Jul 1, 2025 |