HM10DP06D - P-Channel Enhancement Mode Field Effect Transistor

H&M Semiconductor

Description

Trench Power MV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-so

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HM10DP06D p-channel enhancement mode field effect transistor by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM10DP06D
Manufacturer	H&M Semiconductor
File Size	857.79 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	HM10DP06D Datasheet

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Full PDF Text Transcription

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HM'3' P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS -60V ● ID -10A ● RDS(ON)( at VGS= -4.

Published: Jul 1, 2025 |