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HM09P12D - P-Channel Enhancement Mode Power MOSFET

Description

The HM09P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Features

  • VDS = -12V,ID = -9A RDS(ON) < 35mΩ @ VGS=-2.5V RDS(ON) < 25mΩ @ VGS=-4.5V.
  • Advanced trench MOSFET process technology.
  • Ultra low on-resistance with low gate charge.

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P-Channel Enhancement Mode Power MOSFET Description The HM09P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -9A RDS(ON) < 35mΩ @ VGS=-2.5V RDS(ON) < 25mΩ @ VGS=-4.
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