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GC4D20120H Datasheet Silicon Carbide Schottky Diode

Manufacturer: Gwok

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Datasheet Details

Part number GC4D20120H
Manufacturer Gwok
File Size 1.17 MB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GC4D20120H Datasheet

Overview

Wuxi Gwok Semiconductor Co.,Ltd GC4D20120H Silicon Carbide Schottky.

Key Features

  • 1.2kV Schottky Rectifier.
  • Zero Reverse Recovery Current.
  • High-Frequency Operation.
  • Temperature-Independent Switching.
  • Extremely Fast Switching.
  • Positive Temperature Coefficient on VF VRRM = 1200 V IF (TC=135˚C) =    26 A Qc =     99 nC Benefits.
  • Replace Bipolar with Unipolar Rectifiers.
  • Essentially No Switching Losses.
  • Higher Efficiency.
  • Reduction of Heat Sink Requirements.
  • P.

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