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GPT08N65D - POWER FIELD EFFECT TRANSISTOR

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GPT08N65D POWER FIELD EFFECT TRANSISTOR by Greatpower - Datasheet Preview — Datasheet preview – GPT08N65D

Datasheet Details

Part number	GPT08N65D
Manufacturer	Greatpower
File Size	1.18 MB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT08N65D Datasheet
Note	This datasheet PDF includes multiple part numbers: GPT08N65D, GPT08N65. Please refer to the document for exact specifications by model.
Additional preview pages of the GPT08N65D datasheet.

Product details

Features

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

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Published: Nov 8, 2017 |