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SSFP6N90
StarMOST Power MOSFET
■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in
Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
Application
■ Switching application
VDSS = 900V ID25 = 6A RDS(ON) = 2.
SSFP6N90 Datasheet
