GSM8968
Description
GSM8968, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low inline power loss are needed in mercial industrial surface mount applications.
Features
- 100V/3.0A,RDS(ON)=300mΩ@VGS=10V
- 100V/2.0A,RDS(ON)=310mΩ@ VGS=4.5V
- Super high density cell design for extremely low
RDS(ON)
- SOT-89-3L package design
Applications
- Motor and Load Control
- Power Management in White LED System
- Push Pull Converter
- LCD TV Inverter & AD/DC Inverter Systems.
Packages & Pin Assignments
GSM8968YF(SOT-89-3L)
Pin Description
1 Gate 2 Drain 3 Source
.gs-power. 1
Ordering Information
Part Number
GSM8968YF
Marking Information
Package
SOT-89-3L
Quantity Reel
1000 PCS
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
VDSS VGSS
IDM IS
TJ TSTG...
