GSM8931
Description
GSM8931, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Features
- -30V/-4.6A,RDS(ON)=36mΩ@VGS=-10V
- -30V/-3.6A,RDS(ON)=46mΩ@ VGS=-4.5V
- Super high density cell design for extremely low
RDS(ON)
- SOT-89-3L package design
Applications
- Motor and Load Control
- LCD TV Inverter & AD/DC Inverter Systems.
- Backlight Inverter for LCD Display
- Load Switch
- CCFL Inverter
Packages & Pin Assignments
GSM8931YF(SOT-89-3L)
Pin Description
1 Gate 2 Drain 3 Source
.gs-power. 1
Ordering Information
Part Number
GSM8931YF
Marking Information
Package
SOT-89-3L
Quantity Reel
1000 PCS
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
VDSS VGSS
IDM...
