GSM4953WS
Description
GSM4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Features
- -30V/-5.4A,RDS(ON)=60mΩ@VGS=-10V
- -30V/-4.2A,RDS(ON)=80mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS (ON)
- SOP- 8P package design
Applications
- LED Display
- Load Switch
- CCFL Inverter
- Power Management in Notebook puter
Packages & Pin Assignments
GSM4953WSSF(SOP- 8P)
Pin Description
Pin Description
1 Source 1 5
Drain 2
2 Gate 1 6 Drain 2
3 Source 2 7
Drain 1
4 Gate 2 8 Drain 1
.gs-power. 1
Ordering Information
Part Number
GSM4953WSSF
Package
SOP- 8P
Quantity Reel
2500 PCS
Marking Information
Lot Code Date Code
4953WS AAAAAA BBBBBB
GS...
