GSM4435S
Description
GSM4435S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Features
- -30V/-9A,RDS(ON)=18mΩ@VGS=-10V
- -30V/-7A,RDS(ON)=26mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS (ON)
- SOP-8P package design
Applications
- LED Display
- Load Switch
- CCFL Inverter
- Power Management in Notebook puter
Packages & Pin Assignments
GSM4435SSF(SOP-8P)
87 6 5 DD D D
1 2 34 S S SG
Pin Pin Name Pin 1 Source 5 2 Source 6 3 Source 7 4 Gate 8
Pin Name Drain Drain Drain Drain
.gs-power. 1
Ordering Information
Part Number
GSM4435SSF
Marking Information
Package
SOP-8P
Lot Code Date Code
4435S AAAAAA BBBBBB
Quantity Reel
4000 PCS
GS P/N
Absolute Maximum...
