GSM4422
Description
GSM4422, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Packages & Pin Assignments
GSM4422SF (SOP-8)
Features
- 30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V
- 30V/ 6.0A,RDS(ON)=42mΩ@VGS=4.5V
- 30V/ 5.2A,RDS(ON)=50mΩ@VGS=2.5V
- Super high density cell design for extremely low RDS (ON)
- SOP-8P package design
Applications
- DC/DC Converter
- Load Switch
- CCFL Inverter
- Power Management in Notebook puter
1 Source 5 Drain 2 Source 6 Drain 3 Source 7 Drain 4 Gate 8 Drain
Ordering Information
GS P/N
GSM4422 S F
Package Code Pb Free Code
.gs-power. 1
Marking Information
Absolute Maximum Ratings
(TA=25ºC unless otherwise noted)
Symbol
VDSS VGSS
IDM IS
TJ TSTG
RθJA
Parameter
Drain-Source Voltage
Gate
- Source Voltage
Continuous Drain...
