GSM1012E
Description
GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Packages & Pin Assignments
GSM1012EX7F (SOT-523)
Features
- 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V
- 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V
- 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- SOT-523 package design
Applications
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching Smart Phones,
Pagers
Gate
Source
Drain
Ordering Information
.gs-power. 1
Marking Information
Part Number
GSM1012EX7F
Package
SOT-523
Absolute Maximum Ratings
(TA=25º...
