Download BS828 Datasheet PDF
General Semiconductor
BS828
FEATURES - - - - - - - - .045 (1.15) .037 (0.95) Top View .056 (1.43) .052 (1.33) 2 max. .004 (0.1) High breakdown voltage High input impedance High-speed switching No minority carrier storage time CMOS logic patible input No thermal runaway No secondary breakdown Specially suited for telephone subsets .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking S28 .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Gate, 2 = Source, 3 = Drain MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 240 240 ± 20 230 0.3101) 150 - 65 to +150 Unit V V V m A W °C °C VDSS VDGS VGS ID Ptot Tj TS Device on...