1N6263
Features
- For general purpose applications
- Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
- This diode is also available in the Mini MELF case with type designation LL5711 and LL6263.
Dimensions in inches and (millimeters)
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Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box D8/10K per Ammo tape (52mm tape), 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Peak Inverse Voltage Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10 µs Square Wave Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range 1N5711 1N6263 Symbol VRRM Ptot IFSM RΘJA Tj TS Value 70 60...
