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S85JR - Silicon Standard Recovery Diode

Download the S85JR datasheet PDF. This datasheet also covers the S85B variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 100 V to 600 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S85B thru S85JR VRRM = 100 V - 600 V IF =85 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S85B (R) S85D (R) S85G (R) Repetitive peak reverse voltage RMS reverse voltage DC block.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S85B-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S85JR
Manufacturer GeneSiC
File Size 784.42 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet S85JR Datasheet

Full PDF Text Transcription

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 100 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S85B thru S85JR VRRM = 100 V - 600 V IF =85 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S85B (R) S85D (R) S85G (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.
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